RUH6080M3-C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUH6080M3-C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 87 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 26 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 380 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: DFN3030
Аналог (замена) для RUH6080M3-C
RUH6080M3-C Datasheet (PDF)
ruh6080m3-c.pdf
RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De
ruh6080r.pdf
RUH6080RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6.2m(Typ.)@VGS=10V RDS (ON) =7m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceUlt L O R i t Exceptional dv/dt Capability Fast Switching and Fully Avalanche Rated 100% Avalanche Tested
ruh60120m.pdf
RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic
ruh60120l.pdf
RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli
ruh60100m.pdf
RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power
ruh60d60m.pdf
RUH60D60MDual N-Channel Advanced Power MOSFETFeatures Pin Description 60V/60A,D2RDS (ON) =7.2m(Typ.)@VGS=10VD2D1RDS (ON) =8.2m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU