RUH6080M3-C Datasheet: MOSFET, N-Ch, 60V, 80A. Full specification with pinout and replacement list

RUH6080M3-C Datasheet. Specs and Replacement

Type Designator: RUH6080M3-C 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN3030

📄📄 Copy

RUH6080M3-C substitution

- MOSFET ⓘ Cross-Reference Search

RUH6080M3-C datasheet

..1. Size:225K ruichips
ruh6080m3-c.pdf pdf_icon

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green De... See More ⇒

7.1. Size:372K ruichips
ruh6080r.pdf pdf_icon

... See More ⇒

9.1. Size:283K ruichips
ruh60120m.pdf pdf_icon

RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devic... See More ⇒

9.2. Size:321K ruichips
ruh60120l.pdf pdf_icon

RUH60120L N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, D RDS (ON) =3.2m (Typ.)@VGS=10V RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices (RoHS Compliant) S TO252 D Appli... See More ⇒