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RUH6080M3-C Specs and Replacement


   Type Designator: RUH6080M3-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN3030
 

 RUH6080M3-C substitution

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RUH6080M3-C Specs

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 ruh6080m3-c.pdf pdf_icon

RUH6080M3-C

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green De... See More ⇒

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RUH6080M3-C

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RUH6080M3-C

RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devic... See More ⇒

 9.2. Size:321K  ruichips
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RUH6080M3-C

RUH60120L N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, D RDS (ON) =3.2m (Typ.)@VGS=10V RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices (RoHS Compliant) S TO252 D Appli... See More ⇒

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Detailed specifications: RUH4025M3 , RUH40300T , RUH40330T , RUH4040M3 , RUH40D40M , RUH40E12C , RUH60120L , RUH60120M , SPP20N60C3 , RUH6080R , RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S .

Keywords - RUH6080M3-C MOSFET specs

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