H2N65D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

H2N65D datasheet

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2N65 Series N-Channel MOSFET 2A, 650V, N H FQU2N65C H2N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 2N65 FQD2N65C H2N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 2N65 Series Pin Assignment APPLICATION ID=2A

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LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge

9.2. Size:1401K lonten
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LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 5.2 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate

Otros transistores... H2301 , H2302 , H2302A , H2N60P , H2N60F , H2N60U , H2N60D , H2N65U , IRFZ24N , H4N60P , H4N60F , H4N60U , H4N60D , H4N65U , H4N65D , H5N50U , H5N50D .