H2N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: H2N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO-252
H2N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H2N65D Datasheet (PDF)
h2n65u h2n65d.pdf
2N65 SeriesN-Channel MOSFET2A, 650V, N H FQU2N65C H2N65U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI2N65FQD2N65C H2N65D D: TO-252 25Kpcs 2.5K/ 5Kpcs/2N65 Series Pin AssignmentAPPLICATIONID=2A
lnd2n65 lnc2n65 lng2n65 lnh2n65.pdf
LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge
lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf
LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65Lonten N-channel 650V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 5.2DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
