H2N65D MOSFET Datasheet: N-Ch, 650V, 2A. Full specification with pinout and replacement list

H2N65D Specs and Replacement

Type Designator: H2N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO-252

H2N65D substitution

- MOSFET ⓘ Cross-Reference Search

H2N65D datasheet

..1. Size:375K cn haohai electr
h2n65u h2n65d.pdf pdf_icon

2N65 Series N-Channel MOSFET 2A, 650V, N H FQU2N65C H2N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 2N65 FQD2N65C H2N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 2N65 Series Pin Assignment APPLICATION ID=2A... See More ⇒

9.1. Size:1015K lonten
lnd2n65 lnc2n65 lng2n65 lnh2n65.pdf pdf_icon

LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge... See More ⇒

9.2. Size:1401K lonten
lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf pdf_icon

LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 5.2 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒

Detailed specifications: H2301, H2302, H2302A, H2N60P, H2N60F, H2N60U, H2N60D, H2N65U, IRFZ24N, H4N60P, H4N60F, H4N60U, H4N60D, H4N65U, H4N65D, H5N50U, H5N50D