H4N60P Todos los transistores

 ..1. Size:477K  cn haohai electr
 h4n60p h4n60f.pdf

4N60 Series N-Channel MOSFET 4A, 600V, N H FQP4N60C H4N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 4N60 FQPF4N60C H4N60F F TO-220FP 4N60 Series Pin Assignment ID=4A APPLICATION ELECTRONIC BALLAST

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf

 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf

SSH4N55 PCB 24

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate

 9.4. Size:1028K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf

LNC4N60 LND4N60 LNG4N60 LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge

 9.5. Size:370K  cn haohai electr
 h4n60u h4n60d.pdf

4N60 Series N-Channel MOSFET 4A, 600V, N H FQU4N60C H4N60U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N60 FQD4N60C H4N60D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N60 Series Pin Assignment APPLICATION ID=4A