H4N60P PDF and Equivalents Search

 

H4N60P Specs and Replacement

Type Designator: H4N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220AB

H4N60P substitution

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H4N60P datasheet

 ..1. Size:477K  cn haohai electr
 h4n60p h4n60f.pdf pdf_icon

H4N60P

4N60 Series N-Channel MOSFET 4A, 600V, N H FQP4N60C H4N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 4N60 FQPF4N60C H4N60F F TO-220FP 4N60 Series Pin Assignment ID=4A APPLICATION ELECTRONIC BALLAST... See More ⇒

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

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 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

SSH4N55 PCB 24 ... See More ⇒

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

H4N60P

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒

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Detailed specifications: H2302, H2302A, H2N60P, H2N60F, H2N60U, H2N60D, H2N65U, H2N65D, 2N60, H4N60F, H4N60U, H4N60D, H4N65U, H4N65D, H5N50U, H5N50D, H5N60P

Keywords - H4N60P MOSFET specs

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