All MOSFET. H4N60P Datasheet

 

H4N60P Datasheet and Replacement


   Type Designator: H4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.8 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

H4N60P Datasheet (PDF)

 ..1. Size:477K  cn haohai electr
 h4n60p h4n60f.pdf pdf_icon

H4N60P

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQP4N60C H4N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs4N60FQPF4N60C H4N60F F: TO-220FP4N60 Series Pin AssignmentID=4AAPPLICATIONELECTRONIC BALLAST

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

SSH4N55 PCB24

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

H4N60P

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUP66 | BRCS60N02DP | 2SK1959 | PM5W6EA

Keywords - H4N60P MOSFET datasheet

 H4N60P cross reference
 H4N60P equivalent finder
 H4N60P lookup
 H4N60P substitution
 H4N60P replacement

 

 
Back to Top

 


 
.