All MOSFET. H4N60P Datasheet

 

H4N60P Datasheet and Replacement


   Type Designator: H4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.8 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220AB
 

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H4N60P Datasheet (PDF)

 ..1. Size:477K  cn haohai electr
 h4n60p h4n60f.pdf pdf_icon

H4N60P

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQP4N60C H4N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs4N60FQPF4N60C H4N60F F: TO-220FP4N60 Series Pin AssignmentID=4AAPPLICATIONELECTRONIC BALLAST

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

H4N60P

SSH4N55 PCB24

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

H4N60P

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

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Datasheet: H2302 , H2302A , H2N60P , H2N60F , H2N60U , H2N60D , H2N65U , H2N65D , IRF830 , H4N60F , H4N60U , H4N60D , H4N65U , H4N65D , H5N50U , H5N50D , H5N60P .

Keywords - H4N60P MOSFET datasheet

 H4N60P cross reference
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 H4N60P lookup
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