FQD7P06 Todos los transistores

 

FQD7P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD7P06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 28 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 5.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.45 Ohm

Empaquetado / Estuche: TO252, DPAK

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FQD7P06 Datasheet (PDF)

1.1. fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

5.1. fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -5.7A, -200V, RDS(on) = 0.69Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

Otros transistores... FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , 2SK1058 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , FDS4480 , FQH8N100C .

 

 
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