All MOSFET. FQD7P06 Datasheet

 

FQD7P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD7P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO252, DPAK

FQD7P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD7P06 Datasheet (PDF)

1.1. fqd7p06 fqu7p06.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

1.2. fqd7p06tf fqd7p06tm.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

 5.1. fqd7p20 fqu7p20.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e

5.2. fqd7p20tf fqd7p20tm.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -5.7A, -200V, RDS(on) = 0.69Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top