All MOSFET. FQD7P06 Datasheet

 

FQD7P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD7P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO252 DPAK

FQD7P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD7P06 Datasheet (PDF)

0.1. fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

9.1. fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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