All MOSFET. FQD7P06 Datasheet

 

FQD7P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD7P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO252_DPAK

FQD7P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD7P06 Datasheet (PDF)

1.1. fqd7p06 fqu7p06.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

1.2. fqd7p06tf fqd7p06tm.pdf Size:707K _fairchild_semi

FQD7P06
FQD7P06

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

 5.1. fqd7p20 fqu7p20.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e

5.2. fqd7p20tf fqd7p20tm.pdf Size:731K _fairchild_semi

FQD7P06
FQD7P06

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -5.7A, -200V, RDS(on) = 0.69Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

Datasheet: FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , 2SK1058 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , FDS4480 , FQH8N100C .

 

 
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