NCE60ND09AS Todos los transistores

 

NCE60ND09AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60ND09AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SOP-8

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NCE60ND09AS datasheet

 ..1. Size:416K  ncepower
nce60nd09as.pdf pdf_icon

NCE60ND09AS

NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 6.1. Size:643K  ncepower
nce60nd03n.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 6.2. Size:405K  ncepower
nce60nd08s.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R

 6.3. Size:659K  ncepower
nce60nd03s.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

Otros transistores... NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 , 8N60 , NCE60ND18G , NCE60ND20AK , NCE60ND45G , NCE60NF200T , NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I .

 

 

 


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