Справочник MOSFET. NCE60ND09AS

 

NCE60ND09AS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60ND09AS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SOP-8
 

 Аналог (замена) для NCE60ND09AS

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60ND09AS Datasheet (PDF)

 ..1. Size:416K  ncepower
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NCE60ND09AS

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 6.1. Size:643K  ncepower
nce60nd03n.pdfpdf_icon

NCE60ND09AS

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.2. Size:405K  ncepower
nce60nd08s.pdfpdf_icon

NCE60ND09AS

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

 6.3. Size:659K  ncepower
nce60nd03s.pdfpdf_icon

NCE60ND09AS

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

Другие MOSFET... NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 , K2611 , NCE60ND18G , NCE60ND20AK , NCE60ND45G , NCE60NF200T , NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I .

 

 
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