NCE60ND09AS PDF and Equivalents Search

 

NCE60ND09AS Specs and Replacement

Type Designator: NCE60ND09AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP-8

NCE60ND09AS substitution

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NCE60ND09AS datasheet

 ..1. Size:416K  ncepower
 nce60nd09as.pdf pdf_icon

NCE60ND09AS

NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON) ... See More ⇒

 6.1. Size:643K  ncepower
 nce60nd03n.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R... See More ⇒

 6.2. Size:405K  ncepower
 nce60nd08s.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R ... See More ⇒

 6.3. Size:659K  ncepower
 nce60nd03s.pdf pdf_icon

NCE60ND09AS

http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R... See More ⇒

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Detailed specifications: NCE4612SP, NCE4614B, NCE4614C, NCE4618SP, NCE4953A, NCE50N540F, NCE50NF220D, NCE6004, 8N60, NCE60ND18G, NCE60ND20AK, NCE60ND45G, NCE60NF200T, NCE60NF420, NCE60NF420D, NCE60NF420F, NCE60NF420I

Keywords - NCE60ND09AS MOSFET specs

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