NCE60P82AF Todos los transistores

 

NCE60P82AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P82AF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 91.5 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 356 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220F

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NCE60P82AF Datasheet (PDF)

 ..1. Size:665K  ncepower
nce60p82af.pdf

NCE60P82AF
NCE60P82AF

NCE60P82AFhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V =-60V,I =-41ADescription DS DThe NCE60P82AF uses advanced trench technology and design R

 5.1. Size:611K  ncepower
nce60p82ad.pdf

NCE60P82AF
NCE60P82AF

NCE60P82ADhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AD uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

 5.2. Size:718K  ncepower
nce60p82a.pdf

NCE60P82AF
NCE60P82AF

NCE60P82Ahttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82A uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

 5.3. Size:624K  ncepower
nce60p82ak.pdf

NCE60P82AF
NCE60P82AF

NCE60P82AKhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AK uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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