NCE60P82AF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60P82AF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 41 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 356 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de NCE60P82AF MOSFET
- Selecciónⓘ de transistores por parámetros
NCE60P82AF datasheet
nce60p82af.pdf
NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R
nce60p82ad.pdf
NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R
nce60p82ak.pdf
NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R
Otros transistores... NCE60ND45G, NCE60NF200T, NCE60NF420, NCE60NF420D, NCE60NF420F, NCE60NF420I, NCE60NF420K, NCE60P14K, IRLB3034, NCE65N680D, NCE65N680F, NCE65N680I, NCE65N680K, NCE65N680R, NCE65NF130, NCE65NF130D, NCE65NF130F
History: AON6718L
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