NCE60P82AF Todos los transistores

 

NCE60P82AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P82AF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 356 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de NCE60P82AF MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE60P82AF Datasheet (PDF)

 ..1. Size:665K  ncepower
 nce60p82af.pdf pdf_icon

NCE60P82AF

NCE60P82AFhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V =-60V,I =-41ADescription DS DThe NCE60P82AF uses advanced trench technology and design R

 5.1. Size:611K  ncepower
 nce60p82ad.pdf pdf_icon

NCE60P82AF

NCE60P82ADhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AD uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

 5.2. Size:718K  ncepower
 nce60p82a.pdf pdf_icon

NCE60P82AF

NCE60P82Ahttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82A uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

 5.3. Size:624K  ncepower
 nce60p82ak.pdf pdf_icon

NCE60P82AF

NCE60P82AKhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AK uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

MOSTRAR MÁS

Otros transistores... NCE60ND45G , NCE60NF200T , NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I , NCE60NF420K , NCE60P14K , 60N06 , NCE65N680D , NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F .

 

 
Back to Top

 


 
.