NCE60P82AF Datasheet and Replacement
Type Designator: NCE60P82AF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 356 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220F
NCE60P82AF substitution
NCE60P82AF Datasheet (PDF)
nce60p82af.pdf
NCE60P82AFhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V =-60V,I =-41ADescription DS DThe NCE60P82AF uses advanced trench technology and design R
nce60p82ad.pdf
NCE60P82ADhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AD uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR
nce60p82a.pdf
NCE60P82Ahttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82A uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR
nce60p82ak.pdf
NCE60P82AKhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AK uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR
Datasheet: NCE60ND45G , NCE60NF200T , NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I , NCE60NF420K , NCE60P14K , EMB04N03H , NCE65N680D , NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F .
History: JMTQ100N03D | FTK7002
Keywords - NCE60P82AF MOSFET datasheet
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History: JMTQ100N03D | FTK7002
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