NCE60P82AF Datasheet. Specs and Replacement

Type Designator: NCE60P82AF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 356 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-220F

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NCE60P82AF datasheet

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NCE60P82AF

NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R ... See More ⇒

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NCE60P82AF

NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒

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NCE60P82AF

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 nce60p82ak.pdf pdf_icon

NCE60P82AF

NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒

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Detailed specifications: NCE60ND45G, NCE60NF200T, NCE60NF420, NCE60NF420D, NCE60NF420F, NCE60NF420I, NCE60NF420K, NCE60P14K, IRFB31N20D, NCE65N680D, NCE65N680F, NCE65N680I, NCE65N680K, NCE65N680R, NCE65NF130, NCE65NF130D, NCE65NF130F

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