NCEP018NH30QU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP018NH30QU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 144 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 635 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: PDFN3.3X3.3-8L
Búsqueda de reemplazo de NCEP018NH30QU MOSFET
NCEP018NH30QU Datasheet (PDF)
ncep018nh30qu.pdf

http://www.ncepower.comNCEP018NH30QUNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP018NH30QU uses Super Trench III technologyV =30V,I =144ADS Dthat is uniquely optimized to provide the most efficient highR =1.4m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =2.0m (typical) @ V =10VDS(ON) GSswitc
ncep018n60agu.pdf

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi
ncep018n85ll.pdf

NCEP018N85LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina
ncep018n30gu.pdf

http://www.ncepower.com NCEP018N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @
Otros transistores... NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU , P55NF06 , NCEP023NH85AGU , NCEP023NH85GU , NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T .
History: TK22A65X5
History: TK22A65X5



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor | ecg123