NCEP018NH30QU MOSFET Datasheet: N-Ch, 30V, 144A. Full specification with pinout and replacement list

NCEP018NH30QU Specs and Replacement

   Type Designator: NCEP018NH30QU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 144 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN3.3X3.3-8L

NCEP018NH30QU substitution

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NCEP018NH30QU datasheet

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http //www.ncepower.com NCEP018NH30QU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP018NH30QU uses Super Trench III technology V =30V,I =144A DS D that is uniquely optimized to provide the most efficient high R =1.4m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.0m (typical) @ V =10V DS(ON) GS switc... See More ⇒

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ncep018n60agu.pdf pdf_icon

NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi... See More ⇒

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ncep018n85ll.pdf pdf_icon

NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina... See More ⇒

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ncep018n30gu.pdf pdf_icon

http //www.ncepower.com NCEP018N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @ ... See More ⇒