NCEP018NH30QU MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCEP018NH30QU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 144 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN3.3X3.3-8L

NCEP018NH30QU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCEP018NH30QU Datasheet (PDF)

..1. Size:907K ncepower
ncep018nh30qu.pdf

http://www.ncepower.comNCEP018NH30QUNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP018NH30QU uses Super Trench III technologyV =30V,I =144ADS Dthat is uniquely optimized to provide the most efficient highR =1.4m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =2.0m (typical) @ V =10VDS(ON) GSswitc

6.1. Size:1129K ncepower
ncep018n60agu.pdf

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

6.2. Size:407K ncepower
ncep018n85ll.pdf

NCEP018N85LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina

6.3. Size:353K ncepower
ncep018n30gu.pdf

http://www.ncepower.com NCEP018N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @

6.4. Size:711K ncepower
ncep018n10ll.pdf

NCEP018N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =320ADS Dswitching performance. Both conduction and switching power R =1.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

6.5. Size:686K ncepower
ncep018n60d.pdf

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

6.6. Size:1124K ncepower
ncep018n60gu.pdf

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

6.7. Size:686K ncepower
ncep018n60 ncep018n60d.pdf