NCEP018NH30QU datasheet, подбор замены

 ..1. Size:907K  ncepower
 ncep018nh30qu.pdf 

http //www.ncepower.com NCEP018NH30QU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP018NH30QU uses Super Trench III technology V =30V,I =144A DS D that is uniquely optimized to provide the most efficient high R =1.4m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.0m (typical) @ V =10V DS(ON) GS switc

 6.1. Size:1129K  ncepower
 ncep018n60agu.pdf 

NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi

 6.2. Size:407K  ncepower
 ncep018n85ll.pdf 

NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina

 6.3. Size:353K  ncepower
 ncep018n30gu.pdf 

http //www.ncepower.com NCEP018N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @

 6.4. Size:711K  ncepower
 ncep018n10ll.pdf 

NCEP018N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =320A DS D switching performance. Both conduction and switching power R =1.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 6.5. Size:686K  ncepower
 ncep018n60d.pdf 

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 6.6. Size:1124K  ncepower
 ncep018n60gu.pdf 

NCEP018N60GU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60GU uses Super Trench II technology that is V =60V,I =195A DS D uniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 6.7. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf 

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =

 6.8. Size:686K  ncepower
 ncep018n60.pdf 

NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =