NCES120R018T4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCES120R018T4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 312 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 81 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 141 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0234 Ohm
Paquete / Cubierta: TO-247-4L
Búsqueda de reemplazo de NCES120R018T4 MOSFET
NCES120R018T4 datasheet
nces120r018t4.pdf
PbFree Product NCES120R018T4 1200V, 81A, N-channel SiC power MOSFET General Description NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r036t4.pdf
PbFree Product NCES120R036T4 1200V, 50A, N-channel SiC power MOSFET General Description NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r062t4.pdf
PbFree Product NCES120R062T4 1200V, 26A, N-channel SiC power MOSFET General Description NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120p035t4.pdf
PbFree Product NCES120P035T4 1200V, 66A, N-channel SiC power MOSFET General Description NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
Otros transistores... NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , NCES120P035T4 , NCES120P075T4 , 2SK3878 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A , BL10N60A-A , BL10N60A-P , BL10N60-P .
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