NCES120R018T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES120R018T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
|Id|ⓘ - Maximum Drain Current: 81 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 174 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 141 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0234 Ohm
Package: TO-247-4L
NCES120R018T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES120R018T4 Datasheet (PDF)
nces120r018t4.pdf
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nces120r036t4.pdf
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nces120r062t4.pdf
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nces120p035t4.pdf
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nces120p075t4.pdf
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Datasheet: NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , NCES120P035T4 , NCES120P075T4 , 12N60 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A , BL10N60A-A , BL10N60A-P , BL10N60-P .
