All MOSFET. NCES120R018T4 Datasheet

 

NCES120R018T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCES120R018T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
   |Id|ⓘ - Maximum Drain Current: 81 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 174 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0234 Ohm
   Package: TO-247-4L

 NCES120R018T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCES120R018T4 Datasheet (PDF)

 ..1. Size:871K  ncepower
 nces120r018t4.pdf

NCES120R018T4 NCES120R018T4

PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.1. Size:854K  ncepower
 nces120r036t4.pdf

NCES120R018T4 NCES120R018T4

PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.2. Size:832K  ncepower
 nces120r062t4.pdf

NCES120R018T4 NCES120R018T4

PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.1. Size:800K  ncepower
 nces120p035t4.pdf

NCES120R018T4 NCES120R018T4

PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.2. Size:821K  ncepower
 nces120p075t4.pdf

NCES120R018T4 NCES120R018T4

PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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