NCES120R018T4 MOSFET PDF: N-Ch, 1200V, 81A. Full specification with pinout and replacement list

NCES120R018T4 PDF Specs and Replacement

   Type Designator: NCES120R018T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0234 Ohm
   Package: TO-247-4L

NCES120R018T4 substitution

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NCES120R018T4 PDF Specs

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PbFree Product NCES120R018T4 1200V, 81A, N-channel SiC power MOSFET General Description NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high... See More ⇒

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PbFree Product NCES120P035T4 1200V, 66A, N-channel SiC power MOSFET General Description NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high... See More ⇒