NCES120R018T4 datasheet, аналоги, основные параметры
Наименование производителя: NCES120R018T4 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 312 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 81 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 141 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0234 Ohm
Тип корпуса: TO-247-4L
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Аналог (замена) для NCES120R018T4
- подборⓘ MOSFET транзистора по параметрам
NCES120R018T4 даташит
nces120r018t4.pdf
PbFree Product NCES120R018T4 1200V, 81A, N-channel SiC power MOSFET General Description NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r036t4.pdf
PbFree Product NCES120R036T4 1200V, 50A, N-channel SiC power MOSFET General Description NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120r062t4.pdf
PbFree Product NCES120R062T4 1200V, 26A, N-channel SiC power MOSFET General Description NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
nces120p035t4.pdf
PbFree Product NCES120P035T4 1200V, 66A, N-channel SiC power MOSFET General Description NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high
Другие IGBT... NCEP40ND80G, NCEP40T14A, NCEP60ND30AG, NCEP60ND60G, NCES075R026T, NCES075R026T4, NCES120P035T4, NCES120P075T4, 2SK3878, BL10N40-A, BL10N40-D, BL10N40-P, BL10N40-U, BL10N60-A, BL10N60A-A, BL10N60A-P, BL10N60-P
Параметры MOSFET. Взаимосвязь и компромиссы
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