FQI4N80 Todos los transistores

 ..1. Size:8196K  fairchild semi
 fqb4n80 fqi4n80.pdf

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially

 ..2. Size:968K  onsemi
 fqb4n80 fqi4n80.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:821K  fairchild semi
 fqi4n90.pdf

November 2013 FQI4N90 N-Channel QFET MOSFET 900 V, 4.2 A, 3.3 Description Features This N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC) technology has been especially tai

 9.2. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology

 9.3. Size:644K  fairchild semi
 fqb4n90tm fqi4n90tu.pdf

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been es

 9.4. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology

 9.5. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology