Справочник MOSFET. FQI4N80

 

FQI4N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQI4N80
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.6 Ohm
   Тип корпуса: TO262 I2PAK

 Аналог (замена) для FQI4N80

 

 

FQI4N80 Datasheet (PDF)

 ..1. Size:8196K  fairchild semi
 fqb4n80 fqi4n80.pdf

FQI4N80 FQI4N80

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

 ..2. Size:968K  onsemi
 fqb4n80 fqi4n80.pdf

FQI4N80 FQI4N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:821K  fairchild semi
 fqi4n90.pdf

FQI4N80 FQI4N80

November 2013FQI4N90N-Channel QFET MOSFET900 V, 4.2 A, 3.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.1 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC)technology has been especially tai

 9.2. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf

FQI4N80 FQI4N80

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.3. Size:644K  fairchild semi
 fqb4n90tm fqi4n90tu.pdf

FQI4N80 FQI4N80

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es

 9.4. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf

FQI4N80 FQI4N80

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.5. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf

FQI4N80 FQI4N80

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

Другие MOSFET... FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 , IRF540N , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 .

 

 
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