All MOSFET. FQI4N80 Datasheet

 

FQI4N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI4N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3.9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm

Package: TO262, I2PAK

FQI4N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI4N80 Datasheet (PDF)

0.1. fqb4n80 fqi4n80.pdf Size:8196K _fairchild_semi

FQI4N80
FQI4N80

October 2008 QFET® FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.6 pF) This advanced technology has been especially

9.1. fqb4n90tm fqi4n90tu.pdf Size:644K _fairchild_semi

FQI4N80
FQI4N80

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

9.2. fqi4n90.pdf Size:821K _fairchild_semi

FQI4N80
FQI4N80

November 2013 FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 24 nC) technology has been especially tai

 9.3. fqb4n20tm fqi4n20tu.pdf Size:698K _fairchild_semi

FQI4N80
FQI4N80

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

9.4. fqb4n20 fqi4n20.pdf Size:704K _fairchild_semi

FQI4N80
FQI4N80

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

 9.5. fqb4n25tm fqi4n25tu.pdf Size:726K _fairchild_semi

FQI4N80
FQI4N80

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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