FQI7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQI7N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO262 I2PAK

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FQI7N60 Datasheet (PDF)

..1. Size:651K fairchild semi
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

..2. Size:770K onsemi
fqb7n60 fqi7n60.pdf

FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been

9.1. Size:546K fairchild semi
fqi7n10tu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10 / FQI7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technolo

9.2. Size:836K fairchild semi
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially

9.3. Size:554K fairchild semi
fqb7n10ltm fqi7n10ltu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced

9.4. Size:1095K onsemi
fqi7n80.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , IRF3710 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C .

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