FQI7N60. Аналоги и основные параметры
Наименование производителя: FQI7N60
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 142 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Аналог (замена) для FQI7N60
- подборⓘ MOSFET транзистора по параметрам
FQI7N60 даташит
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf
October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially
fqb7n60 fqi7n60.pdf
FQB7N60 / FQI7N60 N-Channel QFET MOSFET 600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, Description ID = 3.7 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 16 pF) planar stripe and DMOS technology. This advanced MOSFET technology has been
fqi7n10tu.pdf
December 2000 TM QFET QFET QFET QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technolo
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf
October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially
Другие MOSFET... FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , IRFP260N , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C .
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