FQI7N60 Datasheet and Replacement
Type Designator: FQI7N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO262 I2PAK
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FQI7N60 Datasheet (PDF)
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially
fqb7n60 fqi7n60.pdf

FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been
fqi7n10tu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10 / FQI7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technolo
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially
Datasheet: FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , IRF3710 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C .
History: BFD71 | DMNH10H028SCT | WML11N80M3 | NTMFS4841N | SFF240M | NTLJS3113P | IRLS4030
Keywords - FQI7N60 MOSFET datasheet
FQI7N60 cross reference
FQI7N60 equivalent finder
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History: BFD71 | DMNH10H028SCT | WML11N80M3 | NTMFS4841N | SFF240M | NTLJS3113P | IRLS4030



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