FQP12P20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP12P20
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 31 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
Paquete / Cubierta: TO220
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FQP12P20 Datasheet (PDF)
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History: BL5N50-D | IXTH31N15MB | NTD5804N | 2SK3435-S | 2N6781 | STU30L01A
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