FQP12P20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP12P20

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 11.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.47 Ohm

Empaquetado / Estuche: TO220

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FQP12P20 Datasheet (PDF)

1.1. fqp12p20.pdf Size:759K _fairchild_semi

May 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect � -11.5A, -200V, RDS(on) = 0.47? @VGS = -10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 31 nC) planar stripe, DMOS technology. � Low Crss ( typical 30 pF) This advanced technology has been especially

4.1. fqp12p10.pdf Size:1058K _fairchild_semi

November 2013 FQP12P10 P-Channel QFET® MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, transistors are produced using Fairchild’s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 21 nC) technology has been especial

5.1. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi

September 2007 � QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description � 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect � Low gate charge ( typical 48 nC) transistors are produced using Fairchild�s proprietary, planar stripe, DMOS technology. � Low Crss ( typical 21pF) This advanced technology has been especially tailored to

5.2. fqp12n60c.pdf Size:1701K _fairchild_semi

March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to

5.3. fqp12n60.pdf Size:530K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQP12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

Otros transistores... FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , 75339P , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 .

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