All MOSFET. FQP12P20 Datasheet

 

FQP12P20 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP12P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm

Package: TO220

FQP12P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP12P20 Datasheet (PDF)

1.1. fqp12p20.pdf Size:759K _fairchild_semi

FQP12P20
FQP12P20

May 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -11.5A, -200V, RDS(on) = 0.47? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially

4.1. fqp12p10.pdf Size:1058K _fairchild_semi

FQP12P20
FQP12P20

November 2013 FQP12P10 P-Channel QFET® MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, transistors are produced using Fairchild’s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 21 nC) technology has been especial

 5.1. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi

FQP12P20
FQP12P20

September 2007 ® QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially tailored to

5.2. fqp12n60c.pdf Size:1701K _fairchild_semi

FQP12P20
FQP12P20

March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to

Datasheet: FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , 75339P , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 .

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MOSFET: FQA22P10 | FQA20N40 | FQA19N20L | FQA17P10 | FQA17N40 | FQA16N50 | FQA16N25C | FQA14N30 | FQA13N80 | FQA13N50C | FQA13N50 | FQA12P20 | FQA12N60 | FQA11N90C | FQA11N90 |

 

 

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