Справочник MOSFET. FQP12P20

 

FQP12P20 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP12P20
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FQP12P20 Datasheet (PDF)

 ..1. Size:759K  fairchild semi
fqp12p20.pdfpdf_icon

FQP12P20

May 2000TMQFETQFETQFETQFET 200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 8.1. Size:1058K  fairchild semi
fqp12p10.pdfpdf_icon

FQP12P20

November 2013FQP12P10P-Channel QFET MOSFET-100 V, -11.5 A, 290 m Description FeaturesThese P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -5.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC)technology has been especial

 9.1. Size:469K  1
fqp12n65c fqpf12n65c.pdfpdf_icon

FQP12P20

12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des

 9.2. Size:530K  fairchild semi
fqp12n60.pdfpdf_icon

FQP12P20

April 2000TMQFETQFETQFETQFETFQP12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSP4N90A | PSMN012-80BS | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | CM140N04

 

 
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