Справочник MOSFET. FQP12P20

 

FQP12P20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQP12P20
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FQP12P20

 

 

FQP12P20 Datasheet (PDF)

 ..1. Size:759K  fairchild semi
fqp12p20.pdf

FQP12P20
FQP12P20

May 2000TMQFETQFETQFETQFET 200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 8.1. Size:1058K  fairchild semi
fqp12p10.pdf

FQP12P20
FQP12P20

November 2013FQP12P10P-Channel QFET MOSFET-100 V, -11.5 A, 290 m Description FeaturesThese P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -5.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC)technology has been especial

 9.1. Size:469K  1
fqp12n65c fqpf12n65c.pdf

FQP12P20
FQP12P20

12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des

 9.2. Size:530K  fairchild semi
fqp12n60.pdf

FQP12P20
FQP12P20

April 2000TMQFETQFETQFETQFETFQP12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

 9.3. Size:1701K  fairchild semi
fqp12n60c.pdf

FQP12P20
FQP12P20

March 2014FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored to

 9.4. Size:1170K  fairchild semi
fqp12n60c fqpf12n60c.pdf

FQP12P20
FQP12P20

September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall

 9.5. Size:1848K  onsemi
fqp12n60c.pdf

FQP12P20
FQP12P20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , IRFP250N , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 .

 

 
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