BLP025N10-P Todos los transistores

 

BLP025N10-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLP025N10-P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 2780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de BLP025N10-P MOSFET

   - Selección ⓘ de transistores por parámetros

 

BLP025N10-P Datasheet (PDF)

 ..1. Size:993K  belling
 blp025n10-b blp025n10-p.pdf pdf_icon

BLP025N10-P

BLP025N10 MOSFET Step-Down Converter 1Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.1. Size:1104K  belling
 blp024n10-ba blp024n10-t.pdf pdf_icon

BLP025N10-P

BLP024N10 MOSFET Step-Down Converter , 1Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.2. Size:988K  belling
 blp021n10-t.pdf pdf_icon

BLP025N10-P

BLP021N10 MOSFET Step-Down Converter 1Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.3. Size:948K  belling
 blp023n10-b blp023n10-p.pdf pdf_icon

BLP025N10-P

BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

MOSTRAR MÁS

Otros transistores... BLP022N10-BA , BLP023N10-B , BLP023N10-BA , BLP023N10-P , BLP023N10-T , BLP024N10-BA , BLP024N10-T , BLP025N10-B , AON7408 , BLP028N10-B , BLP028N10-P , BLP02N06-D , BLP02N06L-D , BLP02N06L-Q , BLP02N06-P , BLP02N06-Q , BLP02N06-T .

History: 2SK3673-01MR | STS6P3LLH6 | TPA65R260M

 

 
Back to Top

 


 
.