BLP025N10-P Datasheet and Replacement
Type Designator: BLP025N10-P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 312.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 66
nS
Cossⓘ -
Output Capacitance: 2780
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025
Ohm
Package:
TO-220
- MOSFET Cross-Reference Search
BLP025N10-P Datasheet (PDF)
..1. Size:993K belling
blp025n10-b blp025n10-p.pdf 
BLP025N10 MOSFET Step-Down Converter 1Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.1. Size:1104K belling
blp024n10-ba blp024n10-t.pdf
BLP024N10 MOSFET Step-Down Converter , 1Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.2. Size:988K belling
blp021n10-t.pdf
BLP021N10 MOSFET Step-Down Converter 1Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.3. Size:948K belling
blp023n10-b blp023n10-p.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.4. Size:975K belling
blp02n08-b blp02n08-p.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.5. Size:752K belling
blp02n08-t.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.6. Size:997K belling
blp023n10-t.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.7. Size:995K belling
blp028n10-b blp028n10-p.pdf
BLP028N10 MOSFET Step-Down Converter 1Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.8. Size:987K belling
blp023n10-ba.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.9. Size:960K belling
blp022n10-ba.pdf
BLP022N10 MOSFET Step-Down Converter 1Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
9.10. Size:953K belling
blp02n08-f.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.11. Size:727K belling
blp02n06-t.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
9.12. Size:1112K belling
blp02n06-d.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
9.13. Size:1115K belling
blp02n06l-d.pdf
BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
9.14. Size:694K belling
blp02n06l-q.pdf
BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
9.15. Size:941K belling
blp02n06-p.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
9.16. Size:985K belling
blp02n08-ba.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.17. Size:693K belling
blp02n06-q.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
Datasheet: IRFP360LC
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, IRFP450A
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History: SML100L16
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Keywords - BLP025N10-P MOSFET datasheet
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