BLP025N10-P - аналоги, параметры транзистора - Справочник транзисторов

BLP025N10-P. Аналоги и основные параметры

Наименование производителя: BLP025N10-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 312.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 66 ns

Cossⓘ - Выходная емкость: 2780 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm

Тип корпуса: TO-220

Аналог (замена) для BLP025N10-P

- подборⓘ MOSFET транзистора по параметрам

BLP025N10-P даташит

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BLP025N10 MOSFET Step-Down Converter 1 Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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BLP024N10 MOSFET Step-Down Converter , 1 Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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BLP021N10 MOSFET Step-Down Converter 1 Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

9.3. Size:948K belling
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BLP023N10 MOSFET Step-Down Converter 1 Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10