BLP032N06-Q Todos los transistores

 

BLP032N06-Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLP032N06-Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1027 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: PDFN5X6
 

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BLP032N06-Q Datasheet (PDF)

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BLP032N06-Q

BLP032N06 MOSFET Step-Down Converter , 1Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

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BLP032N06-Q

BLP032N08 MOSFET Step-Down Converter 1Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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BLP032N06-Q

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.2. Size:998K  belling
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BLP032N06-Q

BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

Otros transistores... BLP02N06-P , BLP02N06-Q , BLP02N06-T , BLP02N08-B , BLP02N08-BA , BLP02N08-F , BLP02N08-P , BLP02N08-T , AON7410 , BLP032N08-T , BLP036N08-B , BLP036N08-D , BLP036N08-P , BLP038N10GL-B , BLP038N10GL-D , BLP038N10GL-P , BLP038N15-T .

History: STW65N80K5 | FDD603AL | 2SK4067I | RS1E280BN | NDP7060 | SWK028P04VT

 

 
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