BLP032N06-Q Datasheet and Replacement
Type Designator: BLP032N06-Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 1027
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
PDFN5X6
- MOSFET Cross-Reference Search
BLP032N06-Q Datasheet (PDF)
..1. Size:834K belling
blp032n06-q.pdf 
BLP032N06 MOSFET Step-Down Converter , 1Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
6.1. Size:1005K belling
blp032n08-t.pdf
BLP032N08 MOSFET Step-Down Converter 1Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85
9.1. Size:1099K belling
blp03n10-ba blp03n10-t.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
9.2. Size:998K belling
blp039n08-q.pdf
BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
9.3. Size:959K belling
blp03n10-f.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
9.4. Size:958K belling
blp039n08-d.pdf
BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par
9.5. Size:1008K belling
blp039n08-p blp039n08-b.pdf
BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
9.6. Size:963K belling
blp03n10-b blp03n10-p.pdf
BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
9.7. Size:967K belling
blp03n08-f.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.8. Size:955K belling
blp036n08-d.pdf
BLP036N08 MOSFET Step-Down Converter , 1Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para
9.9. Size:1099K belling
blp03n08-ba blp03n08-t.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.10. Size:737K belling
blp038n15-t.pdf
BLP038N15 MOSFET Step-Down Converter 1Description , BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150
9.11. Size:938K belling
blp038n10gl-d.pdf
BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par
9.12. Size:976K belling
blp03n08-b blp03n08-p.pdf
BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
9.13. Size:1003K belling
blp038n10gl-p blp038n10gl-b.pdf
BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS
9.14. Size:997K belling
blp036n08-p blp036n08-b.pdf
BLP036N08 MOSFET Step-Down Converter , 1Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para
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History: VBNC1303
| IRFS4010PBF
Keywords - BLP032N06-Q MOSFET datasheet
BLP032N06-Q cross reference
BLP032N06-Q equivalent finder
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BLP032N06-Q replacement
