Справочник MOSFET. BLP032N06-Q

 

BLP032N06-Q Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP032N06-Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1027 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: PDFN5X6
     - подбор MOSFET транзистора по параметрам

 

BLP032N06-Q Datasheet (PDF)

 ..1. Size:834K  belling
 blp032n06-q.pdf pdf_icon

BLP032N06-Q

BLP032N06 MOSFET Step-Down Converter , 1Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 6.1. Size:1005K  belling
 blp032n08-t.pdf pdf_icon

BLP032N06-Q

BLP032N08 MOSFET Step-Down Converter 1Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

 9.1. Size:1099K  belling
 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP032N06-Q

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.2. Size:998K  belling
 blp039n08-q.pdf pdf_icon

BLP032N06-Q

BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMO5N50D1B | KND2803A | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | AP30T10GH-HF

 

 
Back to Top

 


 
.