BLP08N10G-Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLP08N10G-Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 670 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: PDFN5X6
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BLP08N10G-Q Datasheet (PDF)
blp08n10g-d blp08n10g-q.pdf
BLP08N10G MOSFET Step-Down Converter , 1Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
blp08n10g-p blp08n10g-b.pdf
BLP08N10G MOSFET Step-Down Converter , 1Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
Otros transistores... BLP065N10GL-Q , BLP06N08G-B , BLP06N08G-P , BLP075N10G-B , BLP075N10G-P , BLP08N10G-B , BLP08N10G-D , BLP08N10G-P , IRFP064N , BLP10N20J-B , BLP10N20J-P , BLP12N10G-B , BLP12N10G-D , BLP12N10G-E , BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P .
History: CS48N80 | FQD3N50CTM | IRFS3006-7PPBF | CS3N90A3H
History: CS48N80 | FQD3N50CTM | IRFS3006-7PPBF | CS3N90A3H
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