BLP08N10G-Q Datasheet and Replacement
Type Designator: BLP08N10G-Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5X6
BLP08N10G-Q substitution
BLP08N10G-Q Datasheet (PDF)
blp08n10g-d blp08n10g-q.pdf
BLP08N10G MOSFET Step-Down Converter , 1Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
blp08n10g-p blp08n10g-b.pdf
BLP08N10G MOSFET Step-Down Converter , 1Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
Datasheet: BLP065N10GL-Q , BLP06N08G-B , BLP06N08G-P , BLP075N10G-B , BLP075N10G-P , BLP08N10G-B , BLP08N10G-D , BLP08N10G-P , BS170 , BLP10N20J-B , BLP10N20J-P , BLP12N10G-B , BLP12N10G-D , BLP12N10G-E , BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P .
History: MTN8N50FP | GP1M008A050XX | SSF3604 | IRF333 | 2SK1735 | PT530BA | DN3765
Keywords - BLP08N10G-Q MOSFET datasheet
BLP08N10G-Q cross reference
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History: MTN8N50FP | GP1M008A050XX | SSF3604 | IRF333 | 2SK1735 | PT530BA | DN3765
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