BLP12N10G-Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP12N10G-Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 271 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: PDFN5X6

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BLP12N10G-Q datasheet

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 blp12n10g-q.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D

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 blp12n10g-e.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D

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 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D

 4.3. Size:982K  belling
 blp12n10g-d blp12n10g-u.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 49 A D

MOSTRAR MÁS

Otros transistores... BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, IRFP460, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W