Справочник MOSFET. BLP12N10G-Q

 

BLP12N10G-Q Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP12N10G-Q
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 271 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: PDFN5X6
 

 Аналог (замена) для BLP12N10G-Q

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLP12N10G-Q Datasheet (PDF)

 ..1. Size:984K  belling
 blp12n10g-q.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 50 A D

 4.1. Size:953K  belling
 blp12n10g-e.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 11 A D

 4.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 55 A D

 4.3. Size:982K  belling
 blp12n10g-d blp12n10g-u.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 49 A D

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BLP10N20J-B , BLP10N20J-P , BLP12N10G-B , BLP12N10G-D , BLP12N10G-E , BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P , IRF640 , BLP12N10G-U , BLP14N08L-D , BLP14N08L-Q , BLP20N10L-D , BLP20N10L-Q , BLQM15N06L-D , BLS60R036-F , BLS60R036-W .

History: STW13NK100Z | BSP230 | PNM8P30V12

 

 
Back to Top

 


 
.