BLP12N10G-Q. Аналоги и основные параметры

Наименование производителя: BLP12N10G-Q

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 56 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 271 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для BLP12N10G-Q

- подборⓘ MOSFET транзистора по параметрам

 

BLP12N10G-Q даташит

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 blp12n10g-q.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D

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 blp12n10g-e.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D

 4.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D

 4.3. Size:982K  belling
 blp12n10g-d blp12n10g-u.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 49 A D

ПОКАЗАТЬ ЕЩЁ

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