BLP12N10G-Q Specs and Replacement

Type Designator: BLP12N10G-Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 271 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: PDFN5X6

BLP12N10G-Q substitution

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BLP12N10G-Q datasheet

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 blp12n10g-q.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D ... See More ⇒

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 blp12n10g-e.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D ... See More ⇒

 4.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D ... See More ⇒

 4.3. Size:982K  belling
 blp12n10g-d blp12n10g-u.pdf pdf_icon

BLP12N10G-Q

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 49 A D ... See More ⇒

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Detailed specifications: BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, IRFP460, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W

Keywords - BLP12N10G-Q MOSFET specs

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 BLP12N10G-Q replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.