BLS65R165-I Todos los transistores

 

BLS65R165-I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLS65R165-I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO-262
 

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BLS65R165-I Datasheet (PDF)

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 bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf pdf_icon

BLS65R165-I

BLS65R165 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

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 bls65r041f-f bls65r041f-w.pdf pdf_icon

BLS65R165-I

BLS65R041F Power MOSFET 1Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.2. Size:632K  belling
 bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf pdf_icon

BLS65R165-I

BLS65R380 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.3. Size:604K  belling
 bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf pdf_icon

BLS65R165-I

BLS65R560 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

MOSTRAR MÁS

Otros transistores... BLS60R520-A , BLS60R520-D , BLS60R520-P , BLS60R520-U , BLS65R041F-F , BLS65R041F-W , BLS65R165-A , BLS65R165-B , RFP50N06 , BLS65R165-P , BLS65R165-W , BLS65R380-A , BLS65R380-B , BLS65R380-D , BLS65R380-P , BLS65R380-U , BLS65R560-A .

History: IRFP9240 | SIHFI740G

 

 
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