BLS65R165-I. Аналоги и основные параметры

Наименование производителя: BLS65R165-I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 1050 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: TO-262

Аналог (замена) для BLS65R165-I

- подборⓘ MOSFET транзистора по параметрам

 

BLS65R165-I даташит

 ..1. Size:586K  belling
 bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf pdf_icon

BLS65R165-I

BLS65R165 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.1. Size:907K  belling
 bls65r041f-f bls65r041f-w.pdf pdf_icon

BLS65R165-I

BLS65R041F Power MOSFET 1 Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.2. Size:632K  belling
 bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf pdf_icon

BLS65R165-I

BLS65R380 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.3. Size:604K  belling
 bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf pdf_icon

BLS65R165-I

BLS65R560 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLS60R520-A, BLS60R520-D, BLS60R520-P, BLS60R520-U, BLS65R041F-F, BLS65R041F-W, BLS65R165-A, BLS65R165-B, AON7410, BLS65R165-P, BLS65R165-W, BLS65R380-A, BLS65R380-B, BLS65R380-D, BLS65R380-P, BLS65R380-U, BLS65R560-A