BLS65R165-I MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS65R165-I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-262
BLS65R165-I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS65R165-I Datasheet (PDF)
bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf
BLS65R165 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls65r041f-f bls65r041f-w.pdf
BLS65R041F Power MOSFET 1Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf
BLS65R380 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf
BLS65R560 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SIHFPG50 | PMN27UN | SKI10297 | SJMN250R80ZF | PE551BA | SI8100DB | SIA906EDJ
History: SIHFPG50 | PMN27UN | SKI10297 | SJMN250R80ZF | PE551BA | SI8100DB | SIA906EDJ
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918