BLS65R165-I Specs and Replacement

Type Designator: BLS65R165-I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-262

BLS65R165-I substitution

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BLS65R165-I datasheet

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 bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf pdf_icon

BLS65R165-I

BLS65R165 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

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 bls65r041f-f bls65r041f-w.pdf pdf_icon

BLS65R165-I

BLS65R041F Power MOSFET 1 Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒

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 bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf pdf_icon

BLS65R165-I

BLS65R380 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

 8.3. Size:604K  belling
 bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf pdf_icon

BLS65R165-I

BLS65R560 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

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Detailed specifications: BLS60R520-A, BLS60R520-D, BLS60R520-P, BLS60R520-U, BLS65R041F-F, BLS65R041F-W, BLS65R165-A, BLS65R165-B, AON7410, BLS65R165-P, BLS65R165-W, BLS65R380-A, BLS65R380-B, BLS65R380-D, BLS65R380-P, BLS65R380-U, BLS65R560-A

Keywords - BLS65R165-I MOSFET specs

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 BLS65R165-I replacement

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