2SK3147 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3147

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: DPAK

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2SK3147 datasheet

 ..1. Size:94K  renesas
2sk3147.pdf pdf_icon

2SK3147

2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous ADE-208-731) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-(

 0.1. Size:233K  renesas
rej03g1072 2sk3147lsds.pdf pdf_icon

2SK3147

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:852K  cn vbsemi
2sk3147s.pdf pdf_icon

2SK3147

2SK3147S www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 0.3. Size:357K  inchange semiconductor
2sk3147s.pdf pdf_icon

2SK3147

isc N-Channel MOSFET Transistor 2SK3147S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

Otros transistores... 2SK3082, 2SK3133, 2SK3134, 2SK3135, 2SK3136, 2SK3140, 2SK3141, 2SK3142, IRF830, 2SK3148, 2SK3149, 2SK3150, 2SK3151, 2SK3152, 2SK3153, 2SK3154, 2SK3155