2SK3147 Datasheet. Specs and Replacement

Type Designator: 2SK3147  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: DPAK

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2SK3147 datasheet

 ..1. Size:94K  renesas
2sk3147.pdf pdf_icon

2SK3147

2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous ADE-208-731) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-(... See More ⇒

 0.1. Size:233K  renesas
rej03g1072 2sk3147lsds.pdf pdf_icon

2SK3147

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:852K  cn vbsemi
2sk3147s.pdf pdf_icon

2SK3147

2SK3147S www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS ... See More ⇒

 0.3. Size:357K  inchange semiconductor
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2SK3147

isc N-Channel MOSFET Transistor 2SK3147S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

Detailed specifications: 2SK3082, 2SK3133, 2SK3134, 2SK3135, 2SK3136, 2SK3140, 2SK3141, 2SK3142, IRF830, 2SK3148, 2SK3149, 2SK3150, 2SK3151, 2SK3152, 2SK3153, 2SK3154, 2SK3155

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs