MPSA80M850B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSA80M850B
   Código: MP80M850B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13.7 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 14.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET MPSA80M850B

MPSA80M850B Datasheet (PDF)

..1. Size:1141K cn marching-power
mpsa80m850b.pdf

MPSA80M850B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =6.6 ARDS(on) @ :0.85 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

7.1. Size:1064K cn marching-power
mpsa80m670b.pdf

MPSA80M670B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =8.0 A RDS(on) @ :0.67 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Sup

7.2. Size:1101K cn marching-power
mpsa80m250b.pdf

MPSA80M250B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =18 ARDS(on) @ :0.25 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

7.3. Size:1073K cn marching-power
mpsa80m380b.pdf

MPSA80M380B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =13.0 A RDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Su

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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