MPSA80M850B Todos los transistores

 

MPSA80M850B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSA80M850B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 14.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-220F
 

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MPSA80M850B Datasheet (PDF)

 ..1. Size:1141K  cn marching-power
 mpsa80m850b.pdf pdf_icon

MPSA80M850B

MPSA80M850B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =6.6 ARDS(on) @ :0.85 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

 7.1. Size:1064K  cn marching-power
 mpsa80m670b.pdf pdf_icon

MPSA80M850B

MPSA80M670B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =8.0 A RDS(on) @ :0.67 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Sup

 7.2. Size:1101K  cn marching-power
 mpsa80m250b.pdf pdf_icon

MPSA80M850B

MPSA80M250B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =18 ARDS(on) @ :0.25 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

 7.3. Size:1073K  cn marching-power
 mpsa80m380b.pdf pdf_icon

MPSA80M850B

MPSA80M380B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =13.0 A RDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Su

MOSTRAR MÁS

Otros transistores... MPSA70M290 , MPSP70M290 , MPSH70M290 , MPSC70M290 , MPSA70M300CFD , MPSA80M250B , MPSA80M380B , MPSA80M670B , IRFP450 , MPSC60M160CFD , MPSC70M360B , MPSD70M600B , MPSD70M710B , MPSD70M910B , MPSU70M1K1B , MPSU70M1K5 , MPSW60M043CFD .

History: IXFE39N90 | FTK84D | FTK123 | IPD053N06N | PHP160NQ08T | SVGQ109R5NAD | DMN3730UFB4

 

 
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