MPSA80M850B MOSFET. Datasheet pdf. Equivalent
Type Designator: MPSA80M850B
Marking Code: MP80M850B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.7 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 14.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
MPSA80M850B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPSA80M850B Datasheet (PDF)
mpsa80m850b.pdf
MPSA80M850B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =6.6 ARDS(on) @ :0.85 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
mpsa80m670b.pdf
MPSA80M670B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =8.0 A RDS(on) @ :0.67 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Sup
mpsa80m250b.pdf
MPSA80M250B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =18 ARDS(on) @ :0.25 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
mpsa80m380b.pdf
MPSA80M380B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =13.0 A RDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Su
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