FQP2N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP2N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FQP2N90

FQP2N90 Datasheet (PDF)

..1. Size:744K fairchild semi
fqp2n90.pdf

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has bee

..2. Size:1296K onsemi
fqp2n90.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:1331K fairchild semi
fqp2n60.pdf

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

9.2. Size:712K fairchild semi
fqp2n50.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been

9.3. Size:699K fairchild semi
fqp2na90.pdf

September 2000TMQFETQFETQFETQFETFQP2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has

9.4. Size:1366K fairchild semi
fqp2n60c fqpf2n60c.pdf

9.5. Size:649K fairchild semi
fqp2n80.pdf

September 2000TMQFETFQP2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailo

9.6. Size:989K fairchild semi
fqp2n40.pdf

October 2013FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 Aproduced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

9.7. Size:727K fairchild semi
fqp2n30.pdf

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been es

9.8. Size:1596K onsemi
fqp2n60c fqpf2n60c.pdf

9.9. Size:1031K onsemi
fqp2n40.pdf

FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V,DescriptionID = 0.9 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC)is produced using ON Semiconductors proprietary Low Crss (Typ. 3.0 pF)planar stripe and DMOS technology. This advanced Fast SwitchingMOSFET technolog

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