FQP2N90 - описание и поиск аналогов

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has bee

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been

September 2000 TM QFET QFET QFET QFET FQP2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo

September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailo

October 2013 FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Description Features This N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been es

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, Description ID = 0.9 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC) is produced using ON Semiconductor s proprietary Low Crss (Typ. 3.0 pF) planar stripe and DMOS technology. This advanced Fast Switching MOSFET technolog