FQP2N90 MOSFET. Datasheet pdf. Equivalent

   Type Designator: FQP2N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
   Package: TO220

FQP2N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

FQP2N90 Datasheet (PDF)

..1. Size:744K fairchild semi
fqp2n90.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has bee

..2. Size:1296K onsemi
fqp2n90.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:1331K fairchild semi
fqp2n60.pdf pdf_icon

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

9.2. Size:712K fairchild semi
fqp2n50.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has been

9.3. Size:699K fairchild semi
fqp2na90.pdf pdf_icon

September 2000TMQFETQFETQFETQFETFQP2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has

9.4. Size:1366K fairchild semi
fqp2n60c fqpf2n60c.pdf pdf_icon

9.5. Size:649K fairchild semi
fqp2n80.pdf pdf_icon

September 2000TMQFETFQP2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailo

9.6. Size:989K fairchild semi
fqp2n40.pdf pdf_icon

October 2013FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 Aproduced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

9.7. Size:727K fairchild semi
fqp2n30.pdf pdf_icon

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been es

9.8. Size:1596K onsemi
fqp2n60c fqpf2n60c.pdf pdf_icon

9.9. Size:1031K onsemi
fqp2n40.pdf pdf_icon

FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V,DescriptionID = 0.9 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC)is produced using ON Semiconductors proprietary Low Crss (Typ. 3.0 pF)planar stripe and DMOS technology. This advanced Fast SwitchingMOSFET technolog

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

LIST

Last Update

All MOSFET. FQP2N90 Datasheet

FQP2N90 MOSFET. Datasheet pdf. Equivalent

FQP2N90 Datasheet (PDF)

LIST

Last Update

AllTransistors(C)