FIR110N10PG Todos los transistores

 ..1. Size:4212K  first semi
 fir110n10pg.pdf

FIR110N10PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR110N10PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

 9.1. Size:1805K  first semi
 fir11ns65afg.pdf

FIR11NS65AFG 11A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

 9.2. Size:1821K  first semi
 fir11n90ang.pdf

FIR11N90ANG 900V N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) 1.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location

 9.3. Size:2550K  first semi
 fir11n40fg.pdf

FIR11N40FG 400V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=27nC (Typ.). BVDSS=400V,ID=11A G DS RDS(on) 0.4 (Max) @V =10V G 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

 9.4. Size:2921K  first semi
 fir11ns70afg.pdf

FIR11NS70AFG 11A,700V DP MOS Power Transistor-S PIN Connection TO-220F DESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G